Subthreshold electrical transport in amorphous phase-change materials
نویسندگان
چکیده
منابع مشابه
Thermal Transport in Phase Change Memory Materials
Phase change memory uses brief pulses of electrical current to induce phase transitions in chalcogenide material regions with dimensions near or even far below 50 nm. The strongly differing electrical conductivities of the crystalline and amorphous phases allow data storage at densities in excess of terabits per square inch. Nanoscale conduction heat transfer governs the figures of merit in the...
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Thermal transport plays a crucial role in performance and reliability of semiconductor electronic devices, where heat is mainly carried by phonons. Phonon transport in crystalline semiconductor materials, such as Si, Ge, GaAs, GaN, etc, has been extensively studied over the past two decades. In fact, study of phonon physics in crystalline semiconductor materials in both bulk and nanostructure f...
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Gabriele C. Sosso,1 Davide Donadio,2 Sebastiano Caravati,3 Jörg Behler,4 and Marco Bernasconi1,* 1Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 53, I-20125 Milano, Italy 2Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany 3Department of Chemistry and Applied Biosciences, ETH Zurich, and Facoltà di Informatica, Istituto di Scien...
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Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous an...
متن کاملRelation between bandgap and resistance drift in amorphous phase change materials
Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on am...
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ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2015
ISSN: 1367-2630
DOI: 10.1088/1367-2630/17/9/093035